The BSR19AT/R is a NPN transistor from NXP, packaged in a SOT-23 case. It can withstand a collector-emitter voltage of up to 160V and has a gain bandwidth product of 300MHz. The transistor has a minimum current gain of 80 and a maximum power dissipation of 250mW. It is RoHS compliant and operates within a temperature range of -65°C to 150°C.
PackageSOT-23
PolarityNPN
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Technical Specifications
NXP BSR19AT/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector-emitter Voltage-Max | 160V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSR19AT/R Datasheet
Download the complete datasheet for NXP BSR19AT/R to view detailed technical specifications.
No datasheet is available for this part.
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