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Technical Specifications
NXP BUK6E3R2-55C127 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 186ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15.3nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 306W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 306W |
| Rds On Max | 3.2mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 450ns |
| Turn-On Delay Time | 61ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK6E3R2-55C127 Datasheet
Download the complete datasheet for NXP BUK6E3R2-55C127 to view detailed technical specifications.
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