The BUK7109-75ATE118 is a 75V N-channel TrenchMOS MOSFET with a maximum continuous drain current of 120A and a maximum power dissipation of 272W. It features a low on-resistance of 9mR and a fast switching time with a fall time of 100ns and a turn-off delay time of 185ns. The device is packaged in a SOT package and is suitable for high-power applications. The operating temperature range is from -55°C to 175°C.
PackageSOT
PolarityN-CHANNEL
Power272W
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Technical Specifications
NXP BUK7109-75ATE118 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.7nF |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 272W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 272W |
| Rds On Max | 9mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 185ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK7109-75ATE118 Datasheet
Download the complete datasheet for NXP BUK7109-75ATE118 to view detailed technical specifications.
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