MOSFET TRENCH 31V-99V G3
PackageSOT-669
PolarityN-CHANNEL
Power85W
Quick Jump:
Technical Specifications
NXP BUK9Y19-55BT/R technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 17.3mR |
| Fall Time | 134ns |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 44ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9Y19-55BT/R Datasheet
Download the complete datasheet for NXP BUK9Y19-55BT/R to view detailed technical specifications.
No datasheet is available for this part.