The BZV55-B20115 is a surface mount NPN transistor with a collector-emitter breakdown voltage of 45V and impedance of 55 ohms. It has a maximum power dissipation of 500mW and operates over a temperature range of -65°C to 200°C. This lead-free transistor is packaged in a SOT-416 case and is available in a single unit quantity.
PackageSOT-416
Voltage20V
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BZV55-B20115 technical specifications.
General
| Package/Case | SOT-416 |
| Collector Emitter Breakdown Voltage | 45V |
| Impedance | 55R |
| Lead Free | Lead Free |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Max Reverse Leakage Current | 50nA |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Series | 50nA @ 14V |
| Tolerance | 2% |
| Voltage | 20V |
| Zener Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BZV55-B20115 Datasheet
Download the complete datasheet for NXP BZV55-B20115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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