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Technical Specifications
NXP BZV85-C75,113 technical specifications.
General
| Package/Case | DO-41 |
| Collector Emitter Breakdown Voltage | -30V |
| Collector Emitter Saturation Voltage | -300mV |
| Contact Plating | Tin |
| ESD Protection | No |
| Height | 2.6mm |
| hFE Min | 220 |
| Impedance | 225R |
| Lead Free | Lead Free |
| Length | 4.8mm |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.3W |
| Max Reverse Leakage Current | 50nA |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.3W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Tolerance | 5% |
| Transition Frequency | 100MHz |
| Voltage Tolerance | 5% |
| Width | 2.6mm |
| Zener Voltage | 75V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BZV85-C75,113 Datasheet
Download the complete datasheet for NXP BZV85-C75,113 to view detailed technical specifications.
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