The IRF540 is a power MOSFET with a continuous drain current rating of 23A and a maximum operating temperature of 175°C. It has a drain to source breakdown voltage of 100V and a power dissipation of 150W. The device is packaged in a rail/Tube format and is RoHS compliant. It is designed for use in high-power applications and is suitable for use in temperatures ranging from -55°C to 175°C.
Current Rating28A
MountingThrough Hole
Power150W
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Technical Specifications
NXP IRF540 technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Current Rating | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
NXP IRF540 Datasheet
Download the complete datasheet for NXP IRF540 to view detailed technical specifications.
No datasheet is available for this part.