
The NPN transistor is packaged in a SOT-223 surface mount package. It has a collector-emitter breakdown voltage of 400V and a maximum collector current of 1A. The transistor can handle a maximum power dissipation of 1.45W. It operates over a temperature range of -55°C to 150°C. The device is RoHS compliant and lead-free.
NXP PBHV8140Z,115 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 25MHz |
| Gain Bandwidth Product | 25MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.45W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.45W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PBHV8140Z,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
