The PBR951215 is a surface mount NPN transistor with a maximum collector-emitter breakdown voltage of 10V and a continuous collector current of 100mA. It operates at frequencies up to 8GHz and has a maximum power dissipation of 365mW. The transistor is packaged in a TO-236AB case and is lead free. It has an operating temperature range of -65°C to 175°C.
Frequency8GHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBR951215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 14dB |
| Gain Bandwidth Product | 8GHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 100mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 365mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 8000 MHz |
| Output Power | 360mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 365mW |
| Radiation Hardening | No |
| Transition Frequency | 8GHz |
| Weight | 0.00709oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBR951215 Datasheet
Download the complete datasheet for NXP PBR951215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.