The PBSS302ND,115 is a surface mount NPN transistor with a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 4A. It operates at a maximum frequency of 150MHz and has a maximum power dissipation of 2.5W. The transistor is packaged in a TSOP package with dimensions of 1mm height, 3.1mm length, and 1.7mm width. It is RoHS compliant and suitable for use in high-frequency applications. The operating temperature range is from -65°C to 150°C.
Frequency150MHz
PackageTSOP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBSS302ND,115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 450mV |
| Collector-emitter Voltage-Max | 450mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 4A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS302ND,115 Datasheet
Download the complete datasheet for NXP PBSS302ND,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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