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Technical Specifications
NXP PBSS4160DS115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 420mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 220MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4160DS115 Datasheet
Download the complete datasheet for NXP PBSS4160DS115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.