The NPN transistor is packaged in a TSOP package, suitable for surface mount. It can handle a collector-emitter breakdown voltage of 50V and a collector base voltage of 60V. The maximum collector current is 3A and the maximum power dissipation is 750mW. The transistor operates within a temperature range of -65°C to 150°C. It is lead free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBSS4350D,135 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 290mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4350D,135 Datasheet
Download the complete datasheet for NXP PBSS4350D,135 to view detailed technical specifications.
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