The PBSS5330X/T3 is a PNP transistor from NXP with a collector base voltage of 30V and a collector-emitter saturation voltage of -320mV. It has a gain bandwidth product of 100MHz and a minimum current gain of 200. The transistor can handle a maximum power dissipation of 1.6W and operates within a temperature range of -65°C to 150°C. It is available in a SOT-89 package, packaged in quantities of 4000 on a tape and reel.
PackageSOT-89
PolarityPNP
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Technical Specifications
NXP PBSS5330X/T3 technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -320mV |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5330X/T3 Datasheet
Download the complete datasheet for NXP PBSS5330X/T3 to view detailed technical specifications.
No datasheet is available for this part.