PDTA114TMB

TRANS, PNP W/RES, 50V, SOT883B; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:180MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:30; Transistor Case ;RoHS Compliant: Yes

PolarityPNP

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NXP PDTA114TMB technical specifications.

Collector Emitter Breakdown Voltage	-50V
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	250mW
Polarity	PNP
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	180MHz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.