The PDTA123TT,235 transistor features a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a TO-236-3 surface mount package and is suitable for operating temperatures between -65°C and 150°C. The device has a maximum power dissipation of 250mW and is RoHS compliant.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
NXP PDTA123TT,235 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA123TT,235 Datasheet
Download the complete datasheet for NXP PDTA123TT,235 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.