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Technical Specifications
NXP PDTC114EE115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 0.85mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 230MHz |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTC114EE115 Datasheet
Download the complete datasheet for NXP PDTC114EE115 to view detailed technical specifications.
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