The PEMB11,115 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a surface mount SOT-666 package and is RoHS compliant. It has a minimum current gain of 30 and a transition frequency of 180MHz.
PackageSOT-666
MountingSurface Mount
PolarityPNP
Power200mW
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Technical Specifications
NXP PEMB11,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 30 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PEMB11,115 Datasheet
Download the complete datasheet for NXP PEMB11,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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