The PEMB19,115 PNP transistor is a surface mount device with a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 300mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a SOT-666 case and is available in quantities of 4000 per reel. It is lead-free and RoHS compliant.
PackageSOT-666
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
NXP PEMB19,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PEMB19,115 Datasheet
Download the complete datasheet for NXP PEMB19,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.