The PEMB3,115 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 100mV. It has a maximum collector current of 100mA and a maximum power dissipation of 300mW. The transistor is packaged in a SOT-666 surface mount package and is suitable for operating temperatures between -65°C and 150°C. The PEMB3,115 is RoHS compliant but not SVHC compliant.
NXP PEMB3,115 technical specifications.
| Package/Case | SOT-666 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 100mV |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 0.6mm |
| hFE Min | 200 |
| Length | 1.7mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PEMB3,115 to view detailed technical specifications.
No datasheet is available for this part.