The PEMD30,115 NPN/PNP transistor is packaged in a SOT-666 surface mount package. It has a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device can handle a maximum power dissipation of 300mW and operates over a temperature range of -65°C to 150°C. The PEMD30,115 is lead-free and RoHS compliant.
PackageSOT-666
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
NXP PEMD30,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PEMD30,115 Datasheet
Download the complete datasheet for NXP PEMD30,115 to view detailed technical specifications.
No datasheet is available for this part.