The PH2525L115 is a surface mount N-CHANNEL TrenchMOS MOSFET with a breakdown voltage of 25V and a continuous drain current of 100A. It has a maximum power dissipation of 62.5W and operates over a temperature range of -55°C to 150°C. The device has a low on-resistance of 2.5mR and fast switching times, with a fall time of 37ns and a turn-off delay time of 53ns.
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
Quick Jump:
Technical Specifications
NXP PH2525L115 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 4.47nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 41ns |
| Width | 4.1mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH2525L115 Datasheet
Download the complete datasheet for NXP PH2525L115 to view detailed technical specifications.
No datasheet is available for this part.