The PH2625L,115 is a 25V N-CHANNEL power MOSFET from NXP with a maximum continuous drain current of 100A. It features a maximum power dissipation of 62.5W and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The PH2625L,115 is packaged in a SOT-669 case and is available on tape and reel.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
Quick Jump:
Technical Specifications
NXP PH2625L,115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.308nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 41ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH2625L,115 Datasheet
Download the complete datasheet for NXP PH2625L,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
