PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH3230S-115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2MR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 4.1nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 3.2mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 14ns |
| Width | 4.1mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH3230S-115 Datasheet
Download the complete datasheet for NXP PH3230S-115 to view detailed technical specifications.
No datasheet is available for this part.