PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH3230S-115 technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.2MR
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
4.1nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Radiation Hardening
No
Rds On Max
3.2mR
Series
TrenchMOS™
Turn-Off Delay Time
85ns
Turn-On Delay Time
14ns
Width
4.1mm
Compliance
RoHS
Compliant
Datasheet
NXP PH3230S-115 Datasheet
Download the complete datasheet for NXP PH3230S-115 to view detailed technical specifications.
No datasheet is available for this part.