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Technical Specifications
NXP PH4840S,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 94.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.66nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 4.1mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH4840S,115 Datasheet
Download the complete datasheet for NXP PH4840S,115 to view detailed technical specifications.
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