PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH8230E,115 technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
67A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Radiation Hardening
No
Rds On Max
8.2mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
33ns
Turn-On Delay Time
28ns
Width
4.1mm
Compliance
RoHS
Compliant
Datasheet
NXP PH8230E,115 Datasheet
Download the complete datasheet for NXP PH8230E,115 to view detailed technical specifications.
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