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Technical Specifications
NXP PHD101NQ03LT,118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.18nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHD101NQ03LT,118 Datasheet
Download the complete datasheet for NXP PHD101NQ03LT,118 to view detailed technical specifications.
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