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Technical Specifications
NXP PHD71NQ03LT118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.22nF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHD71NQ03LT118 Datasheet
Download the complete datasheet for NXP PHD71NQ03LT118 to view detailed technical specifications.
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