The PHKD6N02LT.518 is a 2-channel N-channel FET from NXP with a maximum drain to source breakdown voltage of 20V and a continuous drain current of 10.9A. It features a trenchMOS architecture and is packaged in a SOT-96-1 case. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 4.17W. It is available in tape and reel packaging with a quantity of 2500 units per reel.
PackageSOT-96-1
PolarityN-CHANNEL
Power4.17W
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Technical Specifications
NXP PHKD6N02LT.518 technical specifications.
General
| Package/Case | SOT-96-1 |
| Continuous Drain Current (ID) | 10.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 23ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.45mm |
| Input Capacitance | 950pF |
| Length | 5mm |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.17W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.17W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHKD6N02LT.518 Datasheet
Download the complete datasheet for NXP PHKD6N02LT.518 to view detailed technical specifications.
No datasheet is available for this part.