The PHT6NQ10T/T3 is a N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a continuous drain current of 3A and a drain to source breakdown voltage of 100V. The device is packaged in a SOT-223 package and is available in quantities of 4000. The PHT6NQ10T/T3 is RoHS compliant and suitable for use in high-temperature applications.
PackageSOT-223
PolarityN-CHANNEL
Power1.8W
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Technical Specifications
NXP PHT6NQ10T/T3 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 100V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHT6NQ10T/T3 Datasheet
Download the complete datasheet for NXP PHT6NQ10T/T3 to view detailed technical specifications.
No datasheet is available for this part.