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Technical Specifications
NXP PMGD290XN115 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 860mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 350MR |
| Dual Supply Voltage | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 34pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 410mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 5ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMGD290XN115 Datasheet
Download the complete datasheet for NXP PMGD290XN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.