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Technical Specifications
NXP PMN50UPE,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 8800ns |
| Gate to Source Voltage (Vgs) | -600mV |
| Input Capacitance | 24pF |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 66mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 2180ns |
| Turn-On Delay Time | 400ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN50UPE,115 Datasheet
Download the complete datasheet for NXP PMN50UPE,115 to view detailed technical specifications.
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