The PMN50XP/T2 is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 4.8A and a drain to source breakdown voltage of -20V. The device features a drain to source resistance of 60mR and a power dissipation of 2.2W. The PMN50XP/T2 is packaged in a TSOP package and is available in quantities of 10,000 per reel.
PackageTSOP
PolarityP-CHANNEL
Power2.2W
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Technical Specifications
NXP PMN50XP/T2 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 60mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.2W |
| Turn-Off Delay Time | 82ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN50XP/T2 Datasheet
Download the complete datasheet for NXP PMN50XP/T2 to view detailed technical specifications.
No datasheet is available for this part.