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Technical Specifications
NXP PMV45EN215 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 42MR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 5ns |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMV45EN215 Datasheet
Download the complete datasheet for NXP PMV45EN215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.