The PSMN005-30K/T3 is a 30V N-Channel Power MOSFET with a continuous drain current of 20A. It features a drain to source breakdown voltage of 30V and a drain to source resistance of 5.5mR. The device has a fall time of 45ns and a gate to source voltage of 20V. It operates over a temperature range of -55°C to 150°C and has a power dissipation of 3.5W.
PackageSO
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
NXP PSMN005-30K/T3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP PSMN005-30K/T3 Datasheet
Download the complete datasheet for NXP PSMN005-30K/T3 to view detailed technical specifications.
No datasheet is available for this part.