The PSMN016-100BS,118 is a 100V power MOSFET from NXP with a maximum continuous drain current of 57A. It features a maximum drain to source voltage of 100V and a maximum power dissipation of 148W. The device is packaged in a SOT package and is available on tape and reel. It is RoHS compliant and has an input capacitance of 2.404nF. The Rds on maximum is 16mR. The device is suitable for use in high-power applications.
PackageSOT
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Technical Specifications
NXP PSMN016-100BS,118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 57A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.404nF |
| Max Dual Supply Voltage | 100V |
| Max Power Dissipation | 148W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN016-100BS,118 Datasheet
Download the complete datasheet for NXP PSMN016-100BS,118 to view detailed technical specifications.
No datasheet is available for this part.