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Technical Specifications
NXP PSMN020-100YS115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 20.5MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.21nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 106W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 20.5mR |
| Turn-Off Delay Time | 37.8ns |
| Turn-On Delay Time | 17.4ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN020-100YS115 Datasheet
Download the complete datasheet for NXP PSMN020-100YS115 to view detailed technical specifications.
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