The PSMN4R2-30MLD is a power MOSFET from NXP with a maximum operating temperature of 175°C and a maximum power dissipation of 65W. It features a continuous drain current of 70A and a drain to source voltage of 30V. The device has a resistance of 0.0035R and a threshold voltage of 1.7V. It is available in a SOT-1210 package and is RoHS compliant.
PackageSOT-1210
Resistance0.0035R
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Technical Specifications
NXP PSMN4R2-30MLD technical specifications.
General
| Package/Case | SOT-1210 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 30V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 65W |
| Reach SVHC Compliant | No |
| Resistance | 0.0035R |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN4R2-30MLD Datasheet
Download the complete datasheet for NXP PSMN4R2-30MLD to view detailed technical specifications.
No datasheet is available for this part.