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Technical Specifications
NXP PSMN6R3-120ESQ technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
120V
Drain to Source Resistance
6.7mR
Drain to Source Voltage (Vdss)
120V
Fall Time
67.7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
11.384nF
Max Dual Supply Voltage
120V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
405W
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
6.7mR
RoHS Compliant
Yes
Turn-Off Delay Time
142.1ns
Turn-On Delay Time
42.1ns
Compliance
RoHS
Compliant
Datasheet
NXP PSMN6R3-120ESQ Datasheet
Download the complete datasheet for NXP PSMN6R3-120ESQ to view detailed technical specifications.
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