
The 2N3702 is a PNP transistor with a maximum collector current of 500mA and a maximum power dissipation of 625mW. It has a collector-emitter breakdown voltage of 25V and a collector-base voltage of -40V. The transistor is packaged in a TO-92-3 case and is available in quantities of 2000 on tape and reel. It operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 100MHz.
Onsemi 2N3702_D27Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 60 |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Series | 2N3702 |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi 2N3702_D27Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
