The 2N3905TAR is a PNP transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It is packaged in a TO-92-3 case and is suitable for through-hole mounting. The transistor has a maximum power dissipation of 625mW and operates over a temperature range of -55°C to 150°C. It is RoHS compliant and available in quantities of 2000 per ammo pack.
PackageTO-92-3
MountingThrough Hole
PolarityPNP
Power625mW
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Technical Specifications
Onsemi 2N3905TAR technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 50 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | 2N3905 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N3905TAR Datasheet
Download the complete datasheet for Onsemi 2N3905TAR to view detailed technical specifications.
No datasheet is available for this part.
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