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Technical Specifications
Onsemi 2N5830_D26Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 80 |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Series | 2N5830 |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 2N5830_D26Z Datasheet
Download the complete datasheet for Onsemi 2N5830_D26Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.