PackagePDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi 4N25_Q technical specifications.
General
Package/Case
PDIP
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
30V
Forward Current
100mA
Input Type
DC
Isolation Voltage
5.3kV
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Packaging
Bulk
Power Dissipation
250mW
Radiation Hardening
No
Reverse Breakdown Voltage
6V
Series
4N25
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi 4N25_Q Datasheet
Download the complete datasheet for Onsemi 4N25_Q to view detailed technical specifications.
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