General purpose phototransistor output optocoupler in a 6-pin DIP package. Features a 7.5kV isolation voltage and 300mV collector-emitter saturation voltage. Operates with a 10mA input current and up to 60mA forward current. Maximum power dissipation is 250mW, with an operating temperature range of -40°C to 100°C. Through-hole mounting and RoHS compliant.
PackagePDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Onsemi 4N37M technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Forward Current | 60mA |
| Input Current | 10mA |
| Input Type | DC |
| Isolation Voltage | 7.5kV |
| Isolation Voltage-Max | 7.5kV |
| Lead Free | Lead Free |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage (DC) | 6V |
| RoHS Compliant | Yes |
| Weight | 0.855g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi 4N37M Datasheet
Download the complete datasheet for Onsemi 4N37M to view detailed technical specifications.
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