The BC637_D26Z is a TO-92-3 packaged NPN transistor from Onsemi with a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A. It operates within a temperature range of -65°C to 150°C and has a gain bandwidth product of 100MHz. The transistor is lead-free and RoHS compliant, suitable for applications requiring high-frequency switching.
Frequency100MHz
PackageTO-92-3
Current Rating1A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC637_D26Z technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BC637 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC637_D26Z Datasheet
Download the complete datasheet for Onsemi BC637_D26Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
