The BC637_J35Z is a TO-92 packaged NPN transistor from Onsemi with a collector-emitter breakdown voltage of 60V and a maximum collector current of 1A. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1W. The device features a gain bandwidth product of 100MHz and a transition frequency of 100MHz. It is available in bulk packaging with 2000 units per package.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC637_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC637_J35Z Datasheet
Download the complete datasheet for Onsemi BC637_J35Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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