The BC859C is a PNP transistor with a collector-emitter voltage maximum of 30V and a maximum collector current of 100mA. It has a gain bandwidth product of 150MHz and a maximum power dissipation of 310mW. The device is packaged in a SOT-23 case and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
PackageSOT-23
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi BC859C technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 420 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Polarity | PNP |
| RoHS Compliant | No |
| Series | BC859 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BC859C Datasheet
Download the complete datasheet for Onsemi BC859C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
