The BF245A_Q is a TO-92 packaged N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 6.5mA. It has a maximum power dissipation of 350mW and a gate to source voltage range of -30V. The device is available in bulk packaging and is suitable for use in a variety of applications.
PackageTO-92
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi BF245A_Q technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 6.5mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | -30V |
| Max Power Dissipation | 350mW |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Series | BF245A |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BF245A_Q Datasheet
Download the complete datasheet for Onsemi BF245A_Q to view detailed technical specifications.
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