The BF256C_Q is a TO-92 packaged N-channel MOSFET with a maximum drain to source breakdown voltage of 30V and a continuous drain current of 11mA. It has a maximum power dissipation of 350mW and is available in bulk packaging. The device is suitable for use in a variety of applications where a low-power N-channel MOSFET is required.
PackageTO-92
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Onsemi BF256C_Q technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 11mA |
| Drain to Source Breakdown Voltage | 30V |
| Gate to Source Voltage (Vgs) | -30V |
| Max Power Dissipation | 350mW |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Series | BF256C |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BF256C_Q Datasheet
Download the complete datasheet for Onsemi BF256C_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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