The CAT5113VI-01-T3 is a non-volatile memory device with 100 positions, operating at a maximum supply voltage of 6V and a minimum supply voltage of 2.5V. It is packaged in a SOIC package and has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C. The device has a supply current of 100uA and a resistance of 1kR. It is available in quantities of 3000 and is packaged on a tape and reel. The device is not radiation hardened.
PackageSOIC
Current100uA
Resistance1kR
Quick Jump:
Technical Specifications
Onsemi CAT5113VI-01-T3 technical specifications.
General
| Package/Case | SOIC |
| Max Operating Temperature | 85°C |
| Memory Type | Non-Volatile, |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 6V |
| Min Supply Voltage | 2.5V |
| Number of Positions | 100 |
| Operating Supply Voltage | 5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Resistance | 1kR |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CAT5113VI-01-T3 Datasheet
Download the complete datasheet for Onsemi CAT5113VI-01-T3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
