The CNY174 is a DC input darlington transistor with a collector emitter saturation voltage of 400mV and a current transfer ratio of 320%. It is packaged in a PDIP case and is available in bulk packaging. The transistor is rated for a maximum power dissipation of 260mW and operates over a temperature range of -55°C to 100°C.
PackagePDIP
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Technical Specifications
Onsemi CNY174_Q technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Current Transfer Ratio | 320% |
| Input Type | DC |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260mW |
| Packaging | Bulk |
| Series | CNY174 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi CNY174_Q Datasheet
Download the complete datasheet for Onsemi CNY174_Q to view detailed technical specifications.
No datasheet is available for this part.
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